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A kinetic Monte Carlo study on the role of defects and detachment in the formation and growth of In chains on Si(100)

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A kinetic Monte Carlo study on the role of defects and detachment in the formation and growth of In chains on Si(100)

Auteurs : RBID : Pascal:09-0434458

Descripteurs français

Pascal (Inist)
- Cinétique, Méthode Monte Carlo, Mécanisme croissance, Autoassemblage, Modèle atomistique, Densité défaut, Degré recouvrement, Germination hétérogène, Barrière surface, Morphologie surface, Barrière diffusion, Indium, Silicium, Couche autoassemblée, Si, Chaîne atomique.

English descriptors

KwdEn :
- Atomic chain, Atomistic model, Coverage rate, Defect density, Diffusion barriers, Growth mechanism, Heterogeneous nucleation, Indium, Kinetics, Monte Carlo methods, Self-assembled layers, Self-assembly, Silicon, Surface barrier, Surface morphology.

Abstract

Deposition on a Si(100) surface and subsequent self-assembly of In atoms into one-dimensional (1D) atomic chains at room temperature is investigated via kinetic Monte Carlo simulation of a suitable atomistic model. Model development is guided by recent experimental observations in which 1D In chains nucleate effectively exclusively at C-type defects, although In atoms can detach from chains. We find that a monotonically decreasing form of the scaled island size distribution (ISD) is consistent with a high defect density which facilitates persistent chain nucleation even at relatively high coverages. The predominance of heterogeneous nucleation may be attributed to several factors including low surface diffusion barriers, a high defect density, and relatively weak In-In binding.

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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">A kinetic Monte Carlo study on the role of defects and detachment in the formation and growth of In chains on Si(100)</title>
<author><name sortKey="Albao, Marvin A" uniqKey="Albao M">Marvin A. Albao</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, National Sun Yat-Sen University</s1>
<s2>Kaohsiung, 804</s2>
<s3>TWN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Taïwan</country>
<wicri:noRegion>Kaohsiung, 804</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Mathematical Sciences and Physics, University of the Philippines Los Banos</s1>
<s2>4031</s2>
<s3>PHL</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>Philippines</country>
<wicri:noRegion>4031</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Evans, J W" uniqKey="Evans J">J. W. Evans</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Ames Laboratory-USDOE, Iowa State University</s1>
<s2>Ames, IA 50011</s2>
<s3>USA</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Ames, IA 50011</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Mathematics, Iowa State University</s1>
<s2>Ames, IA 50011</s2>
<s3>USA</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Ames, IA 50011</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Chuang, Feng Chuan" uniqKey="Chuang F">Feng-Chuan Chuang</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, National Sun Yat-Sen University</s1>
<s2>Kaohsiung, 804</s2>
<s3>TWN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Taïwan</country>
<wicri:noRegion>Kaohsiung, 804</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">09-0434458</idno>
<date when="2009">2009</date>
<idno type="stanalyst">PASCAL 09-0434458 INIST</idno>
<idno type="RBID">Pascal:09-0434458</idno>
<idno type="wicri:Area/Main/Corpus">004F18</idno>
<idno type="wicri:Area/Main/Repository">005A19</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0953-8984</idno>
<title level="j" type="abbreviated">J. phys., Condens. matter : (Print)</title>
<title level="j" type="main">Journal of physics. Condensed matter : (Print)</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Atomic chain</term>
<term>Atomistic model</term>
<term>Coverage rate</term>
<term>Defect density</term>
<term>Diffusion barriers</term>
<term>Growth mechanism</term>
<term>Heterogeneous nucleation</term>
<term>Indium</term>
<term>Kinetics</term>
<term>Monte Carlo methods</term>
<term>Self-assembled layers</term>
<term>Self-assembly</term>
<term>Silicon</term>
<term>Surface barrier</term>
<term>Surface morphology</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Cinétique</term>
<term>Méthode Monte Carlo</term>
<term>Mécanisme croissance</term>
<term>Autoassemblage</term>
<term>Modèle atomistique</term>
<term>Densité défaut</term>
<term>Degré recouvrement</term>
<term>Germination hétérogène</term>
<term>Barrière surface</term>
<term>Morphologie surface</term>
<term>Barrière diffusion</term>
<term>Indium</term>
<term>Silicium</term>
<term>Couche autoassemblée</term>
<term>Si</term>
<term>Chaîne atomique</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Deposition on a Si(100) surface and subsequent self-assembly of In atoms into one-dimensional (1D) atomic chains at room temperature is investigated via kinetic Monte Carlo simulation of a suitable atomistic model. Model development is guided by recent experimental observations in which 1D In chains nucleate effectively exclusively at C-type defects, although In atoms can detach from chains. We find that a monotonically decreasing form of the scaled island size distribution (ISD) is consistent with a high defect density which facilitates persistent chain nucleation even at relatively high coverages. The predominance of heterogeneous nucleation may be attributed to several factors including low surface diffusion barriers, a high defect density, and relatively weak In-In binding.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0953-8984</s0>
</fA01>
<fA02 i1="01"><s0>JCOMEL</s0>
</fA02>
<fA03 i2="1"><s0>J. phys., Condens. matter : (Print)</s0>
</fA03>
<fA05><s2>21</s2>
</fA05>
<fA06><s2>40</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>A kinetic Monte Carlo study on the role of defects and detachment in the formation and growth of In chains on Si(100)</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>ALBAO (Marvin A.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>EVANS (J. W.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>CHUANG (Feng-Chuan)</s1>
</fA11>
<fA14 i1="01"><s1>Department of Physics, National Sun Yat-Sen University</s1>
<s2>Kaohsiung, 804</s2>
<s3>TWN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Institute of Mathematical Sciences and Physics, University of the Philippines Los Banos</s1>
<s2>4031</s2>
<s3>PHL</s3>
<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Ames Laboratory-USDOE, Iowa State University</s1>
<s2>Ames, IA 50011</s2>
<s3>USA</s3>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>Department of Mathematics, Iowa State University</s1>
<s2>Ames, IA 50011</s2>
<s3>USA</s3>
<sZ>2 aut.</sZ>
</fA14>
<fA20><s2>405002.1-405002.8</s2>
</fA20>
<fA21><s1>2009</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>577E2</s2>
<s5>354000171146620040</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2009 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>27 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>09-0434458</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of physics. Condensed matter : (Print)</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Deposition on a Si(100) surface and subsequent self-assembly of In atoms into one-dimensional (1D) atomic chains at room temperature is investigated via kinetic Monte Carlo simulation of a suitable atomistic model. Model development is guided by recent experimental observations in which 1D In chains nucleate effectively exclusively at C-type defects, although In atoms can detach from chains. We find that a monotonically decreasing form of the scaled island size distribution (ISD) is consistent with a high defect density which facilitates persistent chain nucleation even at relatively high coverages. The predominance of heterogeneous nucleation may be attributed to several factors including low surface diffusion barriers, a high defect density, and relatively weak In-In binding.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A15A</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B60H35B</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Cinétique</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Kinetics</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Méthode Monte Carlo</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Monte Carlo methods</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Mécanisme croissance</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Growth mechanism</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Autoassemblage</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Self-assembly</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Modèle atomistique</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Atomistic model</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Modelo atomistico</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Densité défaut</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Defect density</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Densidad defecto</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Degré recouvrement</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Coverage rate</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Grado recubrimiento</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Germination hétérogène</s0>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Heterogeneous nucleation</s0>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Germinación heterogénea</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Barrière surface</s0>
<s5>10</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Surface barrier</s0>
<s5>10</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Barrera superficie</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Morphologie surface</s0>
<s5>11</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Surface morphology</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Barrière diffusion</s0>
<s5>12</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Diffusion barriers</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Indium</s0>
<s2>NC</s2>
<s5>13</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Indium</s0>
<s2>NC</s2>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Silicium</s0>
<s2>NC</s2>
<s5>15</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Silicon</s0>
<s2>NC</s2>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Couche autoassemblée</s0>
<s5>16</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Self-assembled layers</s0>
<s5>16</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Si</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Chaîne atomique</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Atomic chain</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fN21><s1>313</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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A kinetic Monte Carlo study on the role of defects and detachment in the formation and growth of In chains on Si(100)

A kinetic Monte Carlo study on the role of defects and detachment in the formation and growth of In chains on Si(100)

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri